r07ds0521ej0500 rev.5.00 page 1 of 9 jun 24, 2013 preliminary datasheet rjh1cm6dpq-e0 1200v - 20a - igbt application: inverter features ? short circuit withstand time (10 s typ.) ? low collector to emitter saturation voltage v ce(sat) = 2.1 v typ. (at i c = 20 a, v ge = 15 v, ta = 25c) ? built-in fast recovery diode (t rr = 200 ns typ.) in one package ? trench gate and thin wafer technology ? high speed switching t f = 120 ns typ. (at v cc = 600 v, v ge = 15 v, i c = 20 a, rg = 5 , ta = 25c, inductive load) outline 1. gate 2. collecto r 3. emitter 4. collecto r c g e 1 2 3 4 renesas package code: prss0003ze-a (package name: to-247) absolute maximum ratings (ta = 25c) item symbol ratings unit collector to emitter voltage / diode reverse voltage v ces / v r 1200 v gate to emitter voltage v ges 30 v collector current tc = 25c i c 40 a tc = 100c i c 20 a collector peak current i c (peak) note1 60 a collector to emitter diode forward current i df 20 a collector to emitter diode forward peak current i df (peak) note1 60 a collector dissipation p c note2 290 w junction to case the rmal resistance (igbt) j-c note2 0.43 c/w junction to case thermal resistance (diode) j-cd note2 0.69 c/w junction temperature tj 150 c storage temperature tstg ?55 to +150 c notes: 1. pw 10 s, duty cycle 1% 2. value at tc = 25 c r07ds0521ej0500 rev.5.00 jun 24, 2013
rjh1cm6dpq-e0 preliminary r07ds0521ej0500 rev.5.00 page 2 of 9 jun 24, 2013 electrical characteristics (ta = 25c) item symbol min typ max unit test conditions zero gate voltage collector current / diode reverse current i ces /i r ? ? 5 a v ce = 1200 v, v ge = 0 gate to emitter leak current i ges ? ? 1 a v ge = 30 v, v ce = 0 gate to emitter cutoff voltage v ge(off) 4.5 ? 6.5 v v ce = 10 v, i c = 1 ma collector to emitter saturation voltage v ce(sat) ? 2.1 2.7 v i c = 20 a, v ge = 15 v note3 v ce(sat) ? 2.8 ? v i c = 40 a, v ge = 15 v note3 input capacitance cies ? 1600 ? pf v ce = 25 v v ge = 0 f = 1 mhz output capacitance coes ? 85 ? pf reveres transfer capacitance cres ? 45 ? pf total gate charge qg ? 105 ? nc v ge = 15 v v ce = 300 v i c = 20 a gate to emitter charge qge ? 17.5 ? nc gate to collector charge qgc ? 51 ? nc turn-on delay time t d(on) ? 45 ? ns v cc = 600 v v ge = 15 v i c = 20 a rg = 5 inductive load rise time t r ? 21 ? ns turn-off delay time t d(off) ? 120 ? ns fall time t f ? 120 ? ns turn-on energy e on ? 1.8 ? mj turn-off energy e off ? 0.9 ? mj total switching energy e total ? 2.8 ? mj short circuit withstand time t sc ? 10 ? s v cc 720 v, v ge = 15 v tc 125c frd forward voltage v f ? 1.7 ? v i f = 20 a note3 frd reverse recovery time t rr ? 180 ? ns i f = 20 a di f /dt = 100 a/ s frd reverse recovery charge q rr ? 0.62 ? c frd peak reverse recovery current i rr ? 9.2 ? a notes: 3. pulse test.
rjh1cm6dpq-e0 preliminary r07ds0521ej0500 rev.5.00 page 3 of 9 jun 24, 2013 main characteristics 6 0 4 0 5 0 30 20 10 8 0 6 0 4 0 20 co ll ector c u rrent i c (a) ca s e t em p erat u re t c ( c) m a xi m u m d c co ll ector c u rrent vs. ca s e t em p erat u re 02 55 0100 7 5 12 5 1 5 0 17 5 02 55 0100 7 5 12 5 1 5 0 17 5 co ll ector dissip at i on pc ( w ) ca s e t em p erat u re t c ( c) co ll ector dissip at i on vs. ca s e t em p erat u re 4 00 300 200 100 0 0 co ll ector c u rrent i c (a) co ll ector to e m i tter v o l tage v c e ( v ) tu rn - o ff soa 0 4 00 8 00 1200 1 6 00 0 5 0 4 0 30 20 10 typi ca l o u t pu t c h aracter is t i c s 6 0 4 0 5 0 30 20 10 123 45 co ll ector c u rrent i c (a) 0 0 co ll ector to e m i tter v o l tage v c e ( v ) t c = 2 5 c p uls e t e s t v g e = 8 v 1 5 v 12 v 10 v 1 8 v 10 v 12 v typi ca l o u t pu t c h aracter is t i c s co ll ector c u rrent i c (a) co ll ector to e m i tter v o l tage v c e ( v ) 123 45 0 0 v g e = 8 v t c = 1 5 0 c p uls e t e s t 1 5 v 1 8 v co ll ector c u rrent i c (a) co ll ector to e m i tter v o l tage v c e ( v ) m a xi m u m sa f e o p erat i on area 1000 100 1 10 0 . 01 0 . 1 1100 10 10000 1000 t c = 2 5 c s i ng l e puls e 100 s p w = 10 s
rjh1cm6dpq-e0 preliminary r07ds0521ej0500 rev.5.00 page 4 of 9 jun 24, 2013 6 0 4 0 5 0 30 20 10 0 10 8 6 4 2 0 typi ca l t ran sf er c h aracter is t i c s co ll ector c u rrent i c (a) gate to e m i tter v o l tage v g e ( v ) gate to e m i tter c u to ff v o l tage vs. ca s e t em p arat u re ( typi ca l ) ? 2 5 02 5 7 5 12 5 5 0 100 1 5 0 gate to e m i tter c u to ff v o l tage v g e (o ff ) ( v ) v c e = 10 v p uls e t e s t ca s e t em p arat u re t c ( c) 1 ma i c = 10 ma gate to e m i tter v o l tage v g e ( v ) co ll ector to e m i tter sat ul ar i on v o l tage vs. gate to e m i tter v o l tage ( typi ca l ) co ll ector to e m i tter sat ul ar i on v o l tage vs. gate to e m i tter v o l tage ( typi ca l ) co ll ector to e m i tter sat ul ar i on v o l tage v c e ( s at) ( v ) co ll ector to e m i tter sat ul ar i on v o l tage v c e ( s at) ( v ) gate to e m i tter v o l tage v g e ( v ) 0 48 12 20 1 6 t c = 2 5 c 1 5 0 c co ll ector to e m i tter sat u rat i on v o l tage vs. ca s e t em p arat u re ( typi ca l ) co ll ector to e m i tter sat u rat i on v o l tage v c e ( s at) ( v ) ca s e t em p arat u re t c ( c) 1 5 4 3 2 ? 2 5 02 5 7 5 12 5 5 0100 1 5 0 20 a 10 a i c = 4 0 a v g e = 1 5 v p uls e t e s t v c e = 10 v p uls e t e s t 3 2 4 6 5 1 3 2 4 6 5 1 68 12 20 1 6 10 1 8 1 468 12 20 1 6 10 1 8 1 4 t c = 1 5 0 c p uls e t e s t t c = 2 5 c p uls e t e s t i c = 4 0 a 20 a i c = 4 0 a 20 a 20 1 6 12 8 4 0 f re qu enc y c h aracter is t i c s ( typi ca l ) co ll ector c u rrent i c(r m s) (a) f re qu enc y f (k hz ) 1100 10 1000 tj = 12 5 c t c = 9 0 c v c e = 4 00 v v g e = 1 5 v rg = 5 d u t y = 5 0 % 0 co ll ector c u rrent w a v e (s qu are w a v e)
rjh1cm6dpq-e0 preliminary r07ds0521ej0500 rev.5.00 page 5 of 9 jun 24, 2013 10 1000 100 10000 1 10 0 . 1 100 1000 10 5 0 2 5 1 5 0 7 5 12 5 100 s wi tc hi ng c h aracter is t i c s ( typi ca l ) ( 5 ) t d(on) ca s e t em p erat u re t c ( c) ( i nd u ct iv e l oad) s wi tc hi ng ti me s t (n s ) v cc = 6 00 v, v g e = 1 5 v i c = 20 a , rg = 5 t f t d(o ff ) t r 1 10 0 . 1 gate re sis tance rg ( ) ( i nd u ct iv e l oad) gate re sis tance rg ( ) ( i nd u ct iv e l oad) e o ff e on s wi t hi ng e nerg y l o ss e s e (m j ) s wi tc hi ng ti me s t (n s ) s wi tc hi ng c h aracter is t i c s ( typi ca l ) (3) s wi tc hi ng c h aracter is t i c s ( typi ca l ) ( 4 ) 110 100 0 . 1 10 1 100 s wi t hi ng e nerg y l o ss e s e (m j ) 1 10 100 1 10 100 1 10 100 co ll ector c u rrent i c (a) ( i nd u ct iv e l oad) e o ff e on 1 100 10 1000 s wi tc hi ng c h aracter is t i c s ( typi ca l ) (1) s wi tc hi ng c h aracter is t i c s ( typi ca l ) (2) co ll ector c u rrent i c (a) ( i nd u ct iv e l oad) s wi tc hi ng ti me s t (n s ) v cc = 6 00 v, v g e = 1 5 v rg = 5 , t c = 1 5 0 c t d(o ff ) t d(on) t f t r t d(o ff ) t d(on) t f t r v cc = 6 00 v, v g e = 1 5 v i c = 20 a , t c = 1 5 0 c v cc = 6 00 v, v g e = 1 5 v i c = 20 a , t c = 1 5 0 c v cc = 6 00 v, v g e = 1 5 v rg = 5 , t c = 1 5 0 c v cc = 6 00 v, v g e = 1 5 v i c = 20 a , rg = 5 5 0 2 5 1 5 0 7 5 12 5 100 ca s e t em p erat u re t c ( c) ( i nd u ct iv e l oad) s wi tc hi ng c h aracter is t i c s ( typi ca l ) ( 6 ) e o ff e on s wi t hi ng e nerg y l o ss e s e (m j )
rjh1cm6dpq-e0 preliminary r07ds0521ej0500 rev.5.00 page 6 of 9 jun 24, 2013 6 0 4 0 5 0 30 20 10 5 0 100 200 1 5 02 5 0300 0 10 5 30 2 5 20 1 5 0 1 . 0 0 .5 3 . 0 2 .5 2 . 0 1 .5 0 di ode c u rrent s l o p e d i f / dt (a / s ) re v er s e reco v er y ti me t rr (n s ) re v er s e reco v er y ti me vs. di ode c u rrent s l o p e ( typi ca l ) di ode c u rrent s l o p e d i f / dt (a / s ) re v er s e reco v er y c u rrent i rr (a) re v er s e reco v er y c u rrent vs. di ode c u rrent s l o p e ( typi ca l ) di ode c u rrent s l o p e d i f / dt (a / s ) re v er s e reco v er y c h arge q rr ( c) re v er s e reco v er y c h arge vs. di ode c u rrent s l o p e ( typi ca l ) c -e di ode f or w ard v o l tage v c ef ( v ) f or w ard c u rrent vs. f or w ard v o l tage ( typi ca l ) f or w ard c u rrent i f (a) 0123 4 t c = 2 5 c 1 5 0 c v c e = 0 v p uls e t e s t ca p ac i tance c ( pf ) 1 10 100 1000 10000 gate c h arge q g (nc) dy nam i c i n pu t c h aracter is t i c s ( typi ca l ) typi ca l ca p ac i tance vs. co ll ector to e m i tter v o l tage 8 00 6 00 4 00 200 0 0 1 6 12 8 4 0 20 4 0 6 0100 8 0 120 v g e v c e co ll ector to e m i tter v o l tage v c e ( v ) co ll ector to e m i tter v o l tage v c e ( v ) gate to e m i tter v o l tage v g e ( v ) i c = 20 a v cc = 300 v t c = 2 5 c v g e = 0 v f = 1 mhz t c = 2 5 c c i e s coe s cre s 0 4 0 8 0200 120 1 6 0 0 4 0 8 0200 120 1 6 0 i f = 20 a i f = 20 a t c = 1 5 0 c 2 5 c 0 t c = 1 5 0 c 2 5 c 4 00 200 1000 8 00 6 00 0 0 4 0 8 0200 120 1 6 0 i f = 20 a t c = 1 5 0 c 2 5 c
rjh1cm6dpq-e0 preliminary r07ds0521ej0500 rev.5.00 page 7 of 9 jun 24, 2013 0 . 01 1 0 . 1 10 100 1 m10 m 100 m1 10 p dm p w t d = p w t j ? c(t) = s (t) ? j ? c j ? c = 0 .69 c /w, t c = 2 5 c 0 . 2 0 . 1 0 .5 d = 1 t c = 2 5 c p uls e wi dt h p w ( s ) n orma liz ed t ran si ent th erma l i m p edance s (t) n orma liz ed t ran si ent th erma l i m p edance vs. p uls e wi dt h ( i g bt ) p uls e wi dt h p w ( s ) n orma liz ed t ran si ent th erma l i m p edance s (t) n orma liz ed t ran si ent th erma l i m p edance vs. p uls e wi dt h ( di ode) 0 . 01 0 . 1 10 1 100 1 m10 m 100 m1 10 100 100 p dm p w t d = p w t j ? c(t) = s (t) ? j ? c j ? c = 0 .4 3 c /w, t c = 2 5 c t c = 2 5 c 0 . 2 0 . 1 0 .5 d = 1 0 . 01 0 . 02 0 . 0 5 1 sh ot puls e 0 . 01 0 . 02 0 . 0 5 1 sh ot puls e
rjh1cm6dpq-e0 preliminary r07ds0521ej0500 rev.5.00 page 8 of 9 jun 24, 2013 s wi tc hi ng ti me t e s t c i rc ui t di ode re v er s e reco v er y ti me t e s t c i rc ui t w a v e f orm w a v e f orm di ode c l am p d.u.t d.u.t rg l v cc v cc t rr i rr d i f / dt 0 .9 i rr i f i f rg t d(o ff ) t d(on) t f t r 9 0 % 9 0 % 9 0 % 10 % 10 % 10 % v g e i c 0 .5 i rr l 0
rjh1cm6dpq-e0 preliminary r07ds0521ej0500 rev.5.00 page 9 of 9 jun 24, 2013 package dimension 1 5 . 9 4 0.1 9 5 .4 5 6 .1 5 21.13 0.33 20.1 9 0.3 8 4. 5 ma x 3. 6 0 0.1 2.10 1.27 0.13 5 .4 5 2.41 0.71 0.1 5 .02 0.1 9 u nit: mm ? 6 .0g m ass[t yp .] ? prss0003ze-a renesas code j eita package code pre v io us code package name to-247 17. 6 3 13.2 6 + 0.1 ? 0.2 ordering information orderable part number quan tity shipping container rjh1cm6dpq-e0#t2 450 pcs box (tube)
notice 1. descriptions of circuits, software and other related information in this document are provided only to illustrate the operat ion of semiconductor products and application examples. you are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. renesas electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. 2. renesas electronics has used reasonable care in preparing the information included in this document, but renesas electronics does not warrant that such information is error free. renesas electronics assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the information incl uded herein. 3. renesas electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property ri ghts of third parties by or arising from the use of renesas electronics products or technical information described in this document. no license, express, implied or otherwise, is granted hereby under any paten ts, copyrights or other intellectual property rights of renesas electronics or others. 4. you should not alter, modify, copy, or otherwise misappropriate any renesas electronics product, whether in whole or in part . renesas electronics assumes no responsibility for any losses incurred by you or third parties arising from such alteration, modification, copy or otherwise misappropriation of renesas electronics product. 5. renesas electronics products are classified according to the following two quality grades: "standard" and "high quality". t he recommended applications for each renesas electronics product depends on the product's quality grade, as indicated below. "standard": computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic equipment; and industrial robots etc. "high quality": transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; an ti-crime systems; and safety equipment etc. renesas electronics products are neither intended nor authorized for use in products or systems that may pose a direct threat t o human life or bodily injury (artificial life support devices or systems, surgical implantations etc.), or may cause serious property damages (nuclear reactor control systems, military equipment etc.). you mus t check the quality grade of each renesas electronics product before using it in a particular application. you may not use any renesas electronics product for any application for which it is not intended. renesas electronics shall not be in any way liable for any damages or losses incurred by you or third parties arising from the use of any renesas electronics product for which the product is not intended by renesas electronics. 6. you should use the renesas electronics products described in this document within the range specified by renesas electronics , especially with respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. renesas e lectronics shall have no liability for malfunctions or damages arising out of the use of renesas electronics products beyond such specified ranges. 7. although renesas electronics endeavors to improve the quality and reliability of its products, semiconductor products have s pecific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. further, renesas electronics products are not subject to radiation resistance desig n. please be sure to implement safety measures to guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a renesas electronics produc t, such as safety design for hardware and software including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measu res. because the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or systems manufactured by you. 8. please contact a renesas electronics sales office for details as to environmental matters such as the environmental compatib ility of each renesas electronics product. please use renesas electronics products in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, in cluding without limitation, the eu rohs directive. renesas electronics assumes no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations. 9. renesas electronics products and technology may not be used for or incorporated into any products or systems whose manufactu re, use, or sale is prohibited under any applicable domestic or foreign laws or regulations. you should not use renesas electronics products or technology described in this document for any purpose relating to military applications or use by the military, including but not limited to the development of weapons of mass destruction. when exporting the renesas electronics products or technology described in this do cument, you should comply with the applicable export control laws and regulations and follow the procedures required by such laws and regulations. 10. it is the responsibility of the buyer or distributor of renesas electronics products, who distributes, disposes of, or othe rwise places the product with a third party, to notify such third party in advance of the contents and conditions set forth in this document, renesas electronics assumes no responsibility for any losses incurred by yo u or third parties as a result of unauthorized use of renesas electronics products. 11. this document may not be reproduced or duplicated in any form, in whole or in part, without prior written consent of renesa s electronics. 12. please contact a renesas electronics sales office if you have any questions regarding the information contained in this doc ument or renesas electronics products, or if you have any other inquiries. (note 1) "renesas electronics" as used in this document means renesas electronics corporation and also includes its majority-o wned subsidiaries. (note 2) "renesas electronics product(s)" means any product developed or manufactured by or for renesas electronics. htt p ://www.renesas.co m refer to "htt p ://www.renesas.com/" for the latest and detailed information . r e n esas el ec tr o ni cs am e ri ca in c . 2880 scott boulevard santa clara , ca 95050-2554 , u.s.a . tel: +1-408-588-6000, fax: +1-408-588-6130 renesas electronics canada limited 1101 nicholson road, newmarket, ontario l3y 9c3, canada tel: +1-905-898-5441, fax: +1-905-898-3220 renesas electronics europe limited dukes meadow, millboard road, bourne end, buckinghamshire, sl8 5fh, u.k tel: +44-1628-651-700, fax: +44-1628-651-804 renesas electronics europe gmbh arcadiastrasse 10, 40472 dsseldorf, germany tel: +49-211-65030, fax: +49-211-6503-1327 renesas electronics (china) co., ltd. 7th floor, quantum plaza, no.27 zhichunlu haidian district, beijing 100083, p.r.china tel: +86-10-8235-1155, fax: +86-10-8235-7679 renesas electronics (shanghai) co., ltd. unit 204, 205, azia center, no.1233 lujiazui ring rd., pudong district, shanghai 200120, china tel: +86-21-5877-1818, fax: +86-21-6887-7858 / -7898 renesas electronics hong kong limited unit 1601-1613, 16/f., tower 2, grand century place, 193 prince edward road west, mongkok, kowloon, hong kong tel: +852-2886-9318, fax: +852 2886-9022/9044 renesas electronics taiwan co., ltd. 13f, no. 363, fu shing north road, taipei, taiwan tel: +886-2-8175-9600, fax: +886 2-8175-9670 renesas electronics singapore pte. ltd. 80 bendemeer road, unit #06-02 hyflux innovation centre singapore 339949 tel: +65-6213-0200, fax: +65-6213-0300 renesas electronics mala y sia sdn.bhd. unit 906, block b, menara amcorp, amcorp trade centre, no. 18, jln persiaran barat, 46050 petalin g jaya, selan g or darul ehsan, malaysi a tel: +60-3-7955-9390 , fax: +60-3-7955-951 0 renesas electronics korea co. , ltd . 11f., samik lavied' or bld g ., 720-2 yeoksam-don g , kan g nam-ku, seoul 135-080, korea tel: +82-2-558-3737 , fax: +82-2-558-514 1 s ale s o ffi c e s ? 2013 renesas electronics corporation. all ri g hts reserved . colo p hon 2.2
|
